| No | Part number | Description ( Function ) | Manufacturers | |
| 2 | IRFZ34S | (IRFZ34S/L) Power MOSFET PD - 9.892A IRFZ34S/L HEXFET® Power MOSFET l l l l l Advanced Process Technology Surface Mount (IRFZ34S) Low-profile through-hole (IRFZ34L) 175°C Operating Temperature Fast Switching D VDSS = 60V RDS(on) = 0.050Ω G ID = 30A Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance pe |
 International Rectifier |
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| 1 | IRFZ34S | Power MOSFET ( Transistor ) IRFZ34S, IRFZ34L, SiHFZ34S, SiHFZ34L Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 46 11 22 Single 60 0.050 FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology • Surface Mount • Low-Profile Through-Hole (IRFZ34L, SiHFZ34L) • 175 °C Operating Tem |
 Vishay |
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List of most widely used semiconductors
| Part Number | Function | Manufacturers | |
| 1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
 Vishay |
|
| LM317 | This is a popular adjustable voltage regulator. |
 ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |
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