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IRFZ34NLPBF PDF Datasheet

The IRFZ34NLPBF is Power MOSFET ( Transistor ). It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 IRFZ34NLPBF
Power MOSFET ( Transistor )

l Advanced Process Technology l Surface Mount (IRFZ34NS) l Low-profile through-hole (IRFZ34NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free G Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fa

International Rectifier
International Rectifier
pdf

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Recommended search results related to IRFZ34NLPBF

Part No Description ( Function) Manufacturers PDF
IRFZ34   Power MOSFET ( Transistor )

$GYDQFHG 3RZHU 026)(7 FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ 175°C Operating Temperature ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 60V ♦ Lower RDS

Fairchild Semiconductor
Fairchild Semiconductor
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IRFZ34   (IRFZ30 / IRFZ34) N-Channel Power MOSFET

Samsung Electronics
Samsung Electronics
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IRFZ34   Power MOSFET ( Transistor )

International Rectifier
International Rectifier
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IRFZ34   (IRFZ34 / IRFZ35) N-Channel Transistors

International Rectifier
International Rectifier
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IRFZ34   Power MOSFET ( Transistor )

IRFZ34, SiHFZ34 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 46 11 22 Single D FEATURES 60 0.050 • Dynamic dV/dt Rating • 175 °C Operating Temperature • Fast Switching • Ease of Parallelin

Vishay
Vishay
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