No | Part number | Description ( Function ) | Manufacturers | |
26 | IRFZ34 | Power MOSFET ( Transistor ) $GYDQFHG 3RZHU 026)(7 FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ 175°C Operating Temperature ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 60V ♦ Lower RDS(ON): 0.030Ω (Typ.) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TS |
Fairchild Semiconductor |
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25 | IRFZ34 | (IRFZ30 / IRFZ34) N-Channel Power MOSFET
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Samsung Electronics |
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24 | IRFZ34 | Power MOSFET ( Transistor )
|
International Rectifier |
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23 | IRFZ34 | (IRFZ34 / IRFZ35) N-Channel Transistors
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International Rectifier |
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22 | IRFZ34 | Power MOSFET ( Transistor ) IRFZ34, SiHFZ34 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 46 11 22 Single D FEATURES 60 0.050 • Dynamic dV/dt Rating • 175 °C Operating Temperature • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Compliant to RoHS Directive 2002/95/EC Available RoHS* COMPLIAN |
Vishay |
|
21 | IRFZ34 | Trans MOSFET N-CH 60V 30A 3-Pin(3+Tab) TO-220AB |
New Jersey Semiconductor |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |