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Datasheet IRFWZ44 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | IRFWZ44 | Power MOSFET ( Transistor ) $GYDQFHG 3RZHU 026)(7
IRFWZ44
FEATURES
♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ 175°C Operating Temperature ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 60V ♦ Lower RDS(ON): 0.02 |
 Fairchild Semiconductor |
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| 1 | IRFWZ44A | Power MOSFET ( Transistor )
)($785(6
Qýýý$YDODQFKHýý5XJJHGýý7HFKQRORJ Qýýý5XJJHGýý*DWHýý2[LGHýý7HFKQRORJý Qýýý/RZHUýý,QSXWýý&DSDFLWDQFH Qýýý,PSURYHGýý*DWHýý&KDUJH Qýýý([WHQGHGýý6DIHýý2SHUDWLQJýý$UHD Qýýýìæèýý2SHUDWLQJýý7HPSHUDWXUH Qýýý/R |
 Samsung |
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| Número de pieza | Descripción | Fabricantes | |
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