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Datasheet IRFWZ24 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | IRFWZ24 | Power MOSFET ( Transistor ) Advanced Power MOSFET
IRFWZ24
FEATURES
♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ 175°C Operating Temperature ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 60V ♦ Lower RDS(ON): 0.05 |
 Fairchild Semiconductor |
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| 1 | IRFWZ24A | Power MOSFET ( Transistor ) Advanced Power MOSFET
IRFW/IZ24A
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175¡ ÉOperating Temperature Lower Leakage Current : 10 µA (Max.) @ VDS = 60V Lower RDS(ON) : 0.050 Ω (Typ.)
Absolute Ma |
 Samsung |
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