No | Part number | Description ( Function ) | Manufacturers | |
2 | IRFU3710ZPBF | Power MOSFET ( Transistor ) Features Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Multiple Package Options Lead-Free IRFR3710ZPbF IRFU3710ZPbF IRFU3710Z-701PbF HEXFET® Power MOSFET VDSS 100V RDS(on) 18m ID 42A D D Description This HEXFET® Power MOSFET utilizes the |
Infineon |
|
1 | IRFU3710ZPBF | Automotive MOSFET PD - 95513A AUTOMOTIVE MOSFET IRFR3710ZPbF IRFU3710ZPbF HEXFET® Power MOSFET D Features l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free VDSS = 100V G S RDS(on) = 18mΩ ID = 42A Description Specifically designed for Automotive applications, this HEXFET® Power |
International Rectifier |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |