No | Part number | Description ( Function ) | Manufacturers | |
1 | IRFU2905ZPBF | HEXFET Power MOSFET PD - 95943A AUTOMOTIVE MOSFET IRFR2905ZPbF IRFU2905ZPbF HEXFET® Power MOSFET D Features l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free VDSS = 55V G S RDS(on) = 14.5mΩ ID = 42A Description Specifically designed for Automotive applications |
International Rectifier |
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Part No | Description ( Function) | Manufacturers | |
IRFU2905Z | AUTOMOTIVE MOSFET PD - 95811 AUTOMOTIVE MOSFET IRFR2905Z IRFU2905Z HEXFET® Power MOSFET D Features ● ● ● ● ● Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax VDSS = 55V G S RDS(on) = 14.5mΩ I |
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2N2905 | PNP switching transistors DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D111 2N2905; 2N2905A PNP switching transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 May 28 Philips Semiconductors Product specification PNP switching trans |
NXP Semiconductors |
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2N2905 | GENERAL PURPOSE AMPLIFIERS AND SWITCHES 2N2905 2N2907 GENERAL PURPOSE AMPLIFIERS AND SWITCHES DESCRIPTION The 2N2905 and 2N2907 are silicon planar epitaxial PNP transistors in Jedec TO-39 (for 2N2905) and in Jedec TO-18 (for 2N2907) metal case. They are designed for high speed saturated switching and general purpose ap |
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Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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ON Semiconductor |
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