No | Part number | Description ( Function ) | Manufacturers | |
1 | IRFU220PBF | HEXFEP Power MOSFET PD - 95069A IRFR220PbF IRFU220PbF • Lead-Free www.irf.com 1 12/14/04 IRFR/U220PbF 2 www.irf.com IRFR/U220PbF www.irf.com 3 IRFR/U220PbF 4 www.irf.com IRFR/U220PbF www.irf.com 5 IRFR/U220PbF 6 www.irf.com IRFR/U220PbF www.irf.com 7 IRFR/U220PbF Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations • Low Stray Indu |
International Rectifier |
0  1  2  3  4  5  6  7  8 9 |
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Part No | Description ( Function) | Manufacturers | |
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IRFU220A | Advanced Power MOSFET Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 200V Low RDS(ON) : 0.626 Ω (Typ.) IRFR/U220A BVD |
Fairchild Semiconductor |
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IRFU220B | 200V N-Channel MOSFET IRFR220B / IRFU220B November 2001 IRFR220B / IRFU220B 200V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially ta |
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IRFU220N | Power MOSFET ( Transistor ) PD- 94048 SMPS MOSFET Applications l High frequency DC-DC converters IRFR220N IRFU220N HEXFET® Power MOSFET VDSS RDS(on) max (mΩ) 200V 600 ID 5.0A Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Si |
International Rectifier |
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Vishay |
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ON Semiconductor |
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