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Datasheet IRFU220 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 7 | IRFU220 | N-Channel Power MOSFETs IRFR220, IRFU220
Data Sheet July 1999 File Number
2410.2
4.6A, 200V, 0.800 Ohm, N-Channel Power MOSFETs
These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in th |
 Intersil Corporation |
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| 6 | IRFU220 | Power MOSFET ( Transistor ) IRFR220, IRFU220, SiHFR220, SiHFU220
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 14 3.0 7.9 Single
D
FEATURES
200 0.80
• Dynamic dV/dt Rating • Repetitive Avalanche Rated • Surface Mount (IRFR220/SiHFR220) • |
 Vishay Siliconix |
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| 5 | IRFU220A | Advanced Power MOSFET
Advanced Power MOSFET
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 200V Low RDS(ON) : 0.626 Ω (Typ.)
IRFR/U220A
BVDSS = 200 V RDS(on) = |
 Fairchild Semiconductor |
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| 4 | IRFU220B | 200V N-Channel MOSFET IRFR220B / IRFU220B
November 2001
IRFR220B / IRFU220B
200V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize o |
Fairchild Semiconductor |
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