No | Part number | Description ( Function ) | Manufacturers | |
1 | IRFSL31N20DPBF | HEXFET Power MOSFET PD - 94946 SMPS MOSFET Applications l High Frequency DC-DC converters l Lead-Free IRFB31N20DPbF IRFS31N20DPbF IRFSL31N20DPbF HEXFET® Power MOSFET VDSS 200V RDS(on) max 0.082Ω ID 31A Benefits l Low Gate to Drain to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design,(See AN 1001) l Fully Characterized |
International Rectifier |
0  1  2  3  4  5  6  7  8 9 |
Recommended search results related to IRFSL31N20DPBF |
Part No | Description ( Function) | Manufacturers | |
IRFSL31N20D | Power MOSFET ( Transistor ) PD- 93805B SMPS MOSFET IRFB31N20D IRFS31N20D IRFSL31N20D HEXFET® Power MOSFET Applications l High frequency DC-DC converters VDSS 200V RDS(on) max 0.082Ω ID 31A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effe |
IRF |
|
2N3120 | Small Signal Transistors Small Signal Transistors TO-39 Case (Continued) TYPE NO. DESCRIPTION VCBO (V) VCEO (V) *VCER VEBO (V) ICBO @ VCB (µA) (V) *ICEO **ICES ***ICEV ****ICER MIN 5.0 5.0 5.0 5.0 5.0 5.0 4.0 5.0 5.0 5.0 5.0 5.0 5.0 7.0 7.0 5.0 4.0 7.0 7.0 7.0 7.0 5.0 4.0 4.0 5.0 4.0 4.0 4.0 5.0 5.0 5.0 |
Central |
|
2SC3120 | TRANSISTOR (TV TUNER/ UHF MIXER/ VHF~UHF BAND RF AMPLIFIER APPLICATIONS) 2SC3120 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC3120 TV Tuner, UHF Mixer Applications VHF~UHF Band RF Amplifier Applications Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector cur |
Toshiba Semiconductor |
|
2SC3120 | Silicon NPN Epitaxial SMD Type Silicon NPN Epitaxial 2SC3120 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm +0.1 2.4-0.1 Features +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Pa |
Kexin |
|
2SK3120 | Ultrahigh-Speed Switching Applications Ordering number:ENN6103A N-Channel Silicon MOSFET 2SK3120 Ultrahigh-Speed Switching Applications Features · Low ON resistance. · Ultrahigh-speed switching. · 4V drive. Package Dimensions unit:mm 2062A [2SK3120] 4.5 1.6 1.5 0.4 3 1.5 2 3.0 0.75 0.5 1 1.0 4.25max 2.5 0. |
Sanyo Semicon Device |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |