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Datasheet IRFSL11N50A Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | IRFSL11N50A | HEXFET Power MOSFET PD- 91847A
IRFSL11N50A
HEXFET® Power MOSFET
l l l l l
Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paraleling Simple Drive Requirements
D
VDSS = 500V
G S
RDS(on) = 0.55Ω ID = 11A
Description
Third Generation HEXFETs from International Rectifier provide the designer |
 IRF |
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| 2 | IRFSL11N50A | Power MOSFET ( Transistor ) IRFSL11N50A, SiHFSL11N50A
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC)
500 VGS = 10 V
51
Qgs (nC)
12
Qgd (nC)
23
Configuration
Single
I2PAK (TO-262)
D
0.55
G
S D G
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
FEATURES • Dyn |
 Vishay |
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| 1 | IRFSL11N50APBF | HEXFET Power MOSFET PD- 95231
IRFSL11N50APbF
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Lead-Free
www.irf.com
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04/29/04
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IRFSL11N50APbF
TO-2 |
 International Rectifier |
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