No | Part number | Description ( Function ) | Manufacturers | |
3 | IRFS640A | N-Channel MOSFET Transistor INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRFS640A FEATURES ·Avalanche Rugged Technology ·Rugged Gate Oxide Technology ·Lower Input Capacitance ·Improved Gate Charge ·Extended Safe Operating Area ·Lower Leakage Current : 10 A (Max.) @ VDS = 200V DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applic |
Inchange Semiconductor |
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2 | IRFS640A | Advanced Power MOSFET DataSheet DataShee DataSheet DataSheet DataSheet 4 U .com et DataSheet DataShee DataSheet DataSheet DataSheet 4 U .com et DataSheet DataShee DataSheet DataSheet DataSheet 4 U .com et DataSheet DataShee |
Samsung Electronics |
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1 | IRFS640A | Advanced Power MOSFET Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 200V Lower RDS(ON) : 0.144 Ω (Typ. ) 1 IRFS640A BVDSS = 200 V RDS(on) = 0.18 Ω ID = 9.8 A TO-220F 2 3 1.Gate 2. Drain 3. Source Absolute Maxim |
Fairchild Semiconductor |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |