IRFS634B PDF Datasheet

IRF634B/IRFS634B November 2001 IRF634B/IRFS634B 250V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy

250V/5.5A N-Channel Power MOSFET (Discontinued) IRFS634 SAMSUNG General Description  Low on resistance  Improved inductive ruggedness  Fast switching time  Rugged polysilicon gate cell structure  Lower input capacitance  Extended safe operating area  Improv

IRFS634(CS634F) N-Channel MOSFET/N 沟 MOS 晶体管 用途:用于高效 DC/DC 转换和功率开关。 Purpose: These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. 特点: 低栅电荷,低反馈电容,开关速度快。

IRFS634 Rev.D Mar.-2016 DATA SHEET 描述 / Descriptions TO-220F 塑封封装 N 沟道 MOS 场效应管。N-CHANNEL MOSFET in a TO-220F Plastic Package. 特征 / Features 低栅电荷,低反馈电容,开关速度快。 Low gate charge, low crss, fast switching. 用途 / Appl

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRFS634A FEATURES ·Avalanche Rugged Technology ·Rugged Gate Oxide Technology ·Lower Input Capacitance ·Improved Gate Charge ·Extended Safe Operating Area DESCRIPTION ·Designed for use in swit