Datasheet IRFS52N15D Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	Category
1	IRFS52N15D	Power MOSFET, Transistor PD - 94357A SMPS MOSFET IRFB52N15D IRFS52N15D IRFSL52N15D HEXFET® Power MOSFET Applications l High frequency DC-DC converters VDSS 150V RDS(on) max 0.032Ω ID 60A Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Sim	IRF	mosfet
2	IRFS52N15DPBF	Power MOSFET, Transistor PROVISIONAL SMPS MOSFET PD - 97002 IRFB52N15DPbF IRFS52N15DPbF IRFSL52N15DPbF HEXFET® Power MOSFET Applications Key Parameters l High frequency DC-DC converters l Plasma Display Panel l Lead-Free VDS VDS (Avalanche) min. RDS(ON) max @ 10V 150 200 32 V V m: Benefits TJ max l Low Gate-to-Dr	International Rectifier	mosfet

IRF Datasheet ( Hoja de datos ) - resultados coincidentes

N.º	Número de pieza	Descripción	Fabricantes	Catagory
1	IRF-182xx	Inductors w w ELECTRICAL SPECIFICATIONS MATERIAL SPECIFICATIONS Coating: Epoxy-uniform roll coated. Lead: Tinned copper. Core: Ferrite. a D . w ta Sh t e e 4U .c om Inductors Epoxy Conformal Coated Uniform Roll Coated FEATURES IRF Vishay Dale • Flame-retardant coating and color band identification.	Vishay Intertechnology	inductor
2	IRF-46	Inductors Epoxy Conformal Coated IRF-46 Vishay Dale Inductors Epoxy Conformal Coated, Axial Leaded FEATURES • Axial lead type, small lightweight design • Special magnetic core structure contributes to high Q and self-resonant frequencies RoHS • Treated with epoxy resin coating for humidity COMPLIANT resi	Vishay Siliconix	inductor
3	IRF034	N-Channel MOSFET Transistor INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF034 DESCRIPTION ·Drain Current ID=25A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.05Ω(Max) ·Simple Drive Requirements APPLICATIONS ·Switching power supp	Inchange Semiconductor	mosfet
4	IRF034	REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) PD - 90585 REPETITIVE A V ALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) Product Summary Part Number IRF034   IRF034 60V, N-CHANNEL BVDSS RDS(on) 60V 0.050Ω ID 25Α The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transi	International Rectifier	transistor
5	IRF044	N-Channel MOSFET Transistor INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF044 DESCRIPTION ·Drain Current ID=44A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.028Ω(Max) ·Simple Drive Requirements APPLICATIONS ·Switching power sup	Inchange Semiconductor	mosfet
6	IRF044	N-CHANNEL POWER MOSFET IRF044 MECHANICAL DATA Dimensions in mm (inches) 39.95 (1.573) max. 30.40 (1.197) 30.15 (1.187) 17.15 (0.675) 16.64 (0.655) N–CHANNEL POWER MOSFET VDSS ID(cont) RDS(on) FEATURES • HERMETICALLY SEALED TO–3 METAL PACKAGE 7.87 (0.310) 6.99 (0.275) 1 20.32 (0.800) 18.80 (0.740) dia. 1.78 (0.07	Seme LAB	mosfet
7	IRF044	REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE PD - 90584 REPETITIVE A V ALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) Product Summary Part Number IRF044 BVDSS 60V RDS(on) 0.028 Ω ID 44Α  IRF044 60V, N-CHANNEL The HEXFET technology is the key to International Rectifier’s advanced line of	International Rectifier	transistor

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Número de pieza	Descripción	Fabricantes	PDF
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