No | Part number | Description ( Function ) | Manufacturers | |
2 | IRFS38N20DPBF | Power MOSFET ( Transistor ) Applications High frequency DC-DC converters Plasma Display Panel Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) Fully Characterized Avalanche Voltage and Current Lead-Free IRFB38N20DPbF IRFS38N20DPbF IRFSL38N20DPbF HEXFET® Power MOSFET |
Infineon |
|
1 | IRFS38N20DPBF | HEXFET Power MOSFET PROVISIONAL PD - 97001A SMPS MOSFET Applications l High frequency DC-DC converters l Plasma Display Panel l Lead-Free IRFB38N20DPbF IRFS38N20DPbF IRFSL38N20DPbF HEXFET® Power MOSFET Key Parameters VDS VDS (Avalanche) min. RDS(ON) max @ 10V TJ max 200 260 54 175 V V m: °C Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Includ |
International Rectifier |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |