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IRFR9310 PDF Datasheet

The IRFR9310 is Power MOSFET ( Transistor ). It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




Notice


Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

Searched Lists

No Part number Description ( Function ) Manufacturers PDF
3 IRFR9310
Power MOSFET ( Transistor )

PD 9.1663 PRELIMINARY l l l l l l IRFR/U9310 HEXFET® Power MOSFET D P-Channel Surface Mount (IRFR9310) Straight Lead (IRFU9310) Advanced Process Technology Fast Switching Fully Avalanche Rated VDSS = -400V G S RDS(on) = 7.0Ω ID = -1.8A Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve low on-resistance p

IRF
IRF
pdf
2 IRFR9310
Power MOSFET ( Transistor )

IRFR9310, IRFU9310, SiHFR9310, SiHFU9310 www.vishay.com Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration - 400 VGS = - 10 V 13 3.2 5.0 Single 7.0 DPAK (TO-252) D IPAK (TO-251) D GS GD S S G D P-Channel MOSFET FEATURES • P-Channel • Surface Mount (IRFR9310, SiHFR9310) • Straight Lead (IRFU9310,

Vishay Siliconix
Vishay Siliconix
pdf
1 IRFR9310PBF
Power MOSFET ( Transistor )

PD - 95064A P-Channel Surface Mount (IRFR9310) l Straight Lead (IRFU9310) l Advanced Process Technology l Fast Switching l Fully Avalanche Rated l Lead-Free Description l l IRFR9310PbF IRFU9310PbF D HEXFET® Power MOSFET VDSS = -400V RDS(on) = 7.0Ω S G ID = -1.8A Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve low

International Rectifier
International Rectifier
pdf

[1]    

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