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IRFR9120 PDF Datasheet

The IRFR9120 is P Channel Power MOSFET, Power MOSFET ( Transistor ). It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




Notice


Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

Searched Lists

No Part number Description ( Function ) Manufacturers PDF
6 IRFR9120
Power MOSFET ( Transistor )

IRF
IRF
pdf
5 IRFR9120
P Channel Power MOSFET

IRFR9120, IRFU9120 Data Sheet July 1999 File Number 3987.4 5.6A, 100V, 0.600 Ohm, P-Channel Power MOSFETs These advanced power MOSFETs are designed, tested, and guaranteed to withstand a specific level of energy in the avalanche breakdown mode of operation. They are P-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switc

Intersil
Intersil
pdf
4 IRFR9120
Power MOSFET ( Transistor )

IRFR9120, IRFU9120, SiHFR9120, SiHFU9120 www.vishay.com Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration - 100 VGS = - 10 V 18 3.0 9.0 Single 0.60 S DPAK (TO-252) D IPAK (TO-251) D G GS GD S D P-Channel MOSFET FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Surface Mount (IRFR9

Vishay Siliconix
Vishay Siliconix
pdf
3 IRFR9120N
Power MOSFET ( Transistor )

PD - 9.1507A PRELIMINARY l l l l l l l IRFR/U9120N HEXFET® Power MOSFET D Ultra Low On-Resistance P-Channel Surface Mount (IRFR9120N) Straight Lead (IRFU9120N) Advanced Process Technology Fast Switching Fully Avalanche Rated VDSS = -100V RDS(on) = 0.48Ω G S ID = -6.6A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniq

International Rectifier
International Rectifier
pdf
2 IRFR9120NPBF
Power MOSFET ( Transistor )

PD-95020A IRFR9120NPbF IRFU9120NPbF l l l l l l l l Ultra Low On-Resistance P-Channel Surface Mount (IRFR9120N) Straight Lead (IRFU9120N) Advanced Process Technology Fast Switching Fully Avalanche Rated Lead-Free HEXFET® Power MOSFET D VDSS = -100V RDS(on) = 0.48Ω G S ID = -6.6A Description Fifth Generation HEXFETs from International Rectifier utilize advanced process

International Rectifier
International Rectifier
pdf
1 IRFR9120PBF
Power MOSFET ( Transistor )

PD - 95096A IRFR9120PbF IRFU9120PbF • Lead-Free www.irf.com 1 1/10/05 IRFR/U9120PbF 2 www.irf.com IRFR/U9120PbF www.irf.com 3 IRFR/U9120PbF 4 www.irf.com IRFR/U9120PbF www.irf.com 5 IRFR/U9120PbF 6 www.irf.com IRFR/U9120PbF Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations • Low Stray Inductance • Ground Plane

International Rectifier
International Rectifier
pdf

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List of most widely used semiconductors

Part Number Function Manufacturers PDF
1N4007

The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V.

Vishay Semiconductor
Vishay
pdf
LM317

This is a popular adjustable voltage regulator.
( 1.2V to 37V)

On Semiconductor
ON Semiconductor
pdf

 6N137  |   LM393   |   2N3906    |   2N2222   |   TIP120   |

   1N5818   |   LM324N    |   A1015   |   SMAJ20CA  


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