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Datasheet IRFR430 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 6 | IRFR430 | Power MOSFET ( Transistor ) $GYDQFHG 3RZHU 026)(7
IRFR430
FEATURES
♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 500V ♦ Lower RDS(ON): 1.169Ω (Typ.)
BVDSS = 500 V RDS(o |
 Fairchild Semiconductor |
 |
| 5 | IRFR430A | Power MOSFET ( Transistor )
)($785(6
Qýýý$YDODQFKHýý5XJJHGýý7HFKQRORJ Qýýý5XJJHGýý*DWHýý2[LGHýý7HFKQRORJý Qýýý/RZHUýý,QSXWýý&DSDFLWDQFH Qýýý,PSURYHGýý*DWHýý&KDUJH Qýýý([WHQGHGýý6DIHýý2SHUDWLQJýý$UHD Qýýý/RZHUýý/HDNDJHýý&XUUHQWýýãýýìíýý |
 Samsung |
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| 4 | IRFR430A | SMPS MOSFET
PD - 94356A
SMPS MOSFET
IRFR430A IRFU430A
HEXFET® Power MOSFET
Applications Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply l High speed power switching
l
VDSS
500V
RDS(on) max
1.7Ω
ID
5.0A
Benefits Low Gate Charge Qg results in Simple Drive Requirement |
 International Rectifier |
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| 3 | IRFR430A | Power MOSFET ( Transistor ) IRFR430A, IRFU430A, SiHFR430A, SiHFU430A
www.vishay.com
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
500 VGS = 10 V
24 6.5 13 Single
D
DPAK (TO-252)
D
IPAK (TO-251)
D
G
1.7
S G
GD S
S N-Channel MOSFET
FEATURES • L |
 Vishay Siliconix |
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| Número de pieza | Descripción | Fabricantes | |
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