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IRFR3607PBF PDF Datasheet

The IRFR3607PBF is Hexfet Power MOSFET. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 IRFR3607PBF
HEXFET Power MOSFET

PD - 97312 IRFR3607PbF IRFU3607PbF HEXFET® Power MOSFET D Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G Benefits l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhance

International Rectifier
International Rectifier
pdf

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Recommended search results related to IRFR3607PBF

Part No Description ( Function) Manufacturers PDF
AUIRFR3607   Advanced Process Technology

PD - 96376 AUTOMOTIVE GRADE Features l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified * Description AUIRFR3607 AUIRFU3607 HEXFET

International Rectifier
International Rectifier
datasheet pdf
23HS3607-01   Hybrid Stepper Motors

HYBRID STEPPING MOTORS 0.9˚ 2-PHASE 1.8˚ 3.6˚ 23HS SERIES 1.8° Key Features I High Torque I High Accuracy I Smooth Movement General Specifications Bi-polar Model Number 23HS0402-02 23HS0403-02 23HS0404-01 23HS0406 23HS0411 23HS0412 23HS0413 23HS1407 23HS1408 23HS2403 23

ETC
ETC
datasheet pdf
2SC3607   Silicon NPN Epitaxial Planar Type Transistor

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC3607 2SC3607 VHF~UHF Band Low Noise Amplifier Applications Unit: mm · Low noise figure, high gain. · NF = 1.1dB, |S21e|2 = 9.5dB (f = 1 GHz) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Collector-bas

Toshiba Semiconductor
Toshiba Semiconductor
datasheet pdf
2SK3607-01MR   N-CHANNEL SILICON POWER MOSFET

2SK3607-01MR FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) TO-220F Applications Switching regulators UPS (Uninterruptible Power S

Fuji
Fuji
datasheet pdf
8403607JA   2K x 8 CMOS RAM

HM-6516 March 1997 2K x 8 CMOS RAM Description The HM-6516 is a CMOS 2048 x 8 Static Random Access Memory. Extremely low power operation is achieved by the use of complementary MOS design techniques. This low power is further enhanced by the use of synchronous circuit techniques

Intersil Corporation
Intersil Corporation
datasheet pdf

[1]    

List of most widely used semiconductors

Part Number Function Manufacturers PDF
1N4007

The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V.

Vishay Semiconductor
Vishay
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LM317

This is a popular adjustable voltage regulator.
( 1.2V to 37V)

On Semiconductor
ON Semiconductor
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 6N137  |   LM393   |   2N3906    |   2N2222   |   TIP120   |

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