No | Part number | Description ( Function ) | Manufacturers | |
1 | IRFR3518PBF | HEXFET Power MOSFET PD - 95510A IRFR3518PbF IRFU3518PbF Applications l High frequency DC-DC converters l Lead-Free Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current HEXFET® Power MOSFET VDSS 80V RDS(on) max 29mW ID 30A D-Pak I |
International Rectifier |
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Part No | Description ( Function) | Manufacturers | |
IRFR3518 | HEXFET Power MOSFET PD - 94523 IRFR3518 IRFU3518 Applications l High frequency DC-DC converters HEXFET® Power MOSFET VDSS 80V RDS(on) max 29mW ID 30A Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, ( |
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1N3518 | Diode Zener Single 10V 5% 400mW 2-Pin DO-35 |
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2SC3518 | Silicon Power Transistors Silicon Power Transistors 2SC3518,3518-Z NPN DC/DC VCEO 60 V IC(pulse) 7.0 A hFE hFE = 100 MIN. (VCE = 1.0 V, IC = 2.0 A) VCE(sat) 0.3 V (IC = 2.0 A, IB = 0.2 A) TA = 25°C VCBO VCEO VEBO IC(DC) IC(pulse) IB(DC) PT(TA = 25°C) PT(TC = 25°C) Tj Tstg 1. PW 10 ms, Duty Cycle 50 |
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2SC3518-Z | NPN SILICON EPITAXIAL TRANSISTOR MP-3 |
NEC |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |