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Datasheet IRFR330 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
5 | IRFR330 | Power MOSFET ( Transistor ) $GYDQFHG 3RZHU 026)(7
IRFR330
FEATURES
♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 400V ♦ Lower RDS(ON): 0.765Ω (Typ.)
BVDSS = 400 V RDS(o |
Fairchild Semiconductor |
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4 | IRFR3303 | HEXFET Power MOSFET PD - 9.1642A
IRFR/U3303
HEXFET® Power MOSFET
l l l l l l
Ultra Low On-Resistance Surface Mount (IRFR3303) Straight Lead (IRFU3033) Advanced Process Technology Fast Switching Fully Avalanche Rated
D
VDSS = 30V RDS(on) = 0.031Ω
G
ID = 33A
S
Description
Fifth Generation HEXFETs from Interna |
International Rectifier |
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3 | IRFR3303PBF | HEXFET Power MOSFET PD - 95070A
IRFR3303PbF IRFU3303PbF
l l l l l l l
Ultra Low On-Resistance Surface Mount (IRFR3303) Straight Lead (IRFU3033) Advanced Process Technology Fast Switching Fully Avalanche Rated Lead-Free
HEXFET® Power MOSFET
D
VDSS = 30V RDS(on) = 0.031Ω
G S
Description
Fifth Generation HEXFETs |
International Rectifier |
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2 | IRFR330A | Power MOSFET ( Transistor )
)($785(6
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Samsung |
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Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
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