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Datasheet IRFR234 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | IRFR234 | Power MOSFET ( Transistor ) $GYDQFHG 3RZHU 026)(7
IRFR234
FEATURES
♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 250V ♦ Lower RDS(ON): 0.327Ω (Typ.)
BVDSS = 250 V RDS(o |
 Fairchild Semiconductor |
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| 2 | IRFR234A | Power MOSFET ( Transistor )
)($785(6
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 Samsung |
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| 1 | IRFR234B | 250V N-Channel MOSFET IRFR234B / IRFU234B
November 2001
IRFR234B / IRFU234B
250V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize o |
Fairchild Semiconductor |
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