No | Part number | Description ( Function ) | Manufacturers | |
7 | IRFR220 | N-Channel Power MOSFETs IRFR220, IRFU220 Data Sheet July 1999 File Number 2410.2 4.6A, 200V, 0.800 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed |
Intersil Corporation |
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6 | IRFR220 | Power MOSFET ( Transistor ) IRFR220, IRFU220, SiHFR220, SiHFU220 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 14 3.0 7.9 Single D FEATURES 200 0.80 • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Surface Mount (IRFR220/SiHFR220) • Straight Lead (IRFU220/SiHFU220) • Available in Tape and Reel • Fast Switchi |
Vishay Siliconix |
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5 | IRFR220A | Advanced Power MOSFET Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 200V Low RDS(ON) : 0.626 Ω (Typ.) IRFR/U220A BVDSS = 200 V RDS(on) = 0.8 Ω ID = 4.6 A D-PAK 2 1 3 1 I-PAK 2 3 1. Gate 2. Drain 3. Source Abso |
Fairchild Semiconductor |
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4 | IRFR220B | 200V N-Channel MOSFET IRFR220B / IRFU220B November 2001 IRFR220B / IRFU220B 200V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high e |
Fairchild Semiconductor |
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3 | IRFR220N | Power MOSFET ( Transistor ) PD- 94048 SMPS MOSFET Applications l High frequency DC-DC converters IRFR220N IRFU220N HEXFET® Power MOSFET VDSS RDS(on) max (mΩ) 200V 600 ID 5.0A Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current l D-Pak I |
International Rectifier |
|
2 | IRFR220NPBF | (IRFR220NPBF / IRFU220NPBF) HEXFET Power MOSFET PD- 95063A SMPS MOSFET Applications l High frequency DC-DC converters l Lead-Free IRFR220NPbF IRFU220NPbF HEXFET® Power MOSFET VDSS RDS(on) max (mΩ) 200V 600 ID 5.0A Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized |
International Rectifier |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |