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IRFR12N25DPBF PDF Datasheet

The IRFR12N25DPBF is Smps MOSFET. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 IRFR12N25DPBF
SMPS MOSFET

PD - 95353A SMPS MOSFET IRFR12N25DPbF IRFU12N25DPbF HEXFET® Power MOSFET Applications l High frequency DC-DC converters l Lead-Free VDSS 250V RDS(on) max 0.26Ω ID 14A Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltag

International Rectifier
International Rectifier
pdf

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Recommended search results related to IRFR12N25DPBF

Part No Description ( Function) Manufacturers PDF
IRFR12N25D   (IRFR12N25D / IRFU12N25D) SMPS MOSFET

PD - 94296A SMPS MOSFET Applications High frequency DC-DC converters IRFR12N25D IRFU12N25D HEXFET® Power MOSFET l VDSS 250V RDS(on) max 0.26Ω ID 14A Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS

International Rectifier
International Rectifier
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1225   DS1225

DS1225AB/AD 64k Nonvolatile SRAM www.dalsemi.com FEATURES 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Directly replaces 8k x 8 volatile static RAM or EEPROM Unlimited write cycles Low-pow

Dallas
Dallas
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28B1225-100   2000 Series / Ferrites

2000 Series Ferrites for EMI Suppression w w at .D w h S a ee U 4 t m o .c Cylindrical Ferrites A 2.03 6.78 ± .15 9.53 ± .20 9.53 ± .20 9.53 ± .20 9.91 ± .20 12.70 ± .25 14.27 ± .25 14.27 ± .25 14.27 ± .25 14.27 ± .25 14.27 ± .25 14.48 ± .25 14.99 ± .25 14.

ETC
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2SA1225   Silicon PNP Epitaxial Type Transistor

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1225 Power Amplifier Applications Driver Stage Amplifier Applications 2SA1225 Unit: mm • High transition frequency: fT = 100 MHz (typ.) • Complementary to 2SC2983 Absolute Maximum Ratings (Ta = 25°C) Characte

Toshiba Semiconductor
Toshiba Semiconductor
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2SA1225   Silicon PNP Power Transistor

isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SA1225 DESCRIPTION ·High transition frequency ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·Complementary to 2SC2983 APPLICATIONS ·Power amplifier applic

Inchange Semiconductor
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[1]    

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1N4007

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 6N137  |   LM393   |   2N3906    |   2N2222   |   TIP120   |

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