No | Part number | Description ( Function ) | Manufacturers | |
1 | IRFR12N25DPBF | SMPS MOSFET PD - 95353A SMPS MOSFET IRFR12N25DPbF IRFU12N25DPbF HEXFET® Power MOSFET Applications l High frequency DC-DC converters l Lead-Free VDSS 250V RDS(on) max 0.26Ω ID 14A Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltag |
International Rectifier |
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Recommended search results related to IRFR12N25DPBF |
Part No | Description ( Function) | Manufacturers | |
IRFR12N25D | (IRFR12N25D / IRFU12N25D) SMPS MOSFET PD - 94296A SMPS MOSFET Applications High frequency DC-DC converters IRFR12N25D IRFU12N25D HEXFET® Power MOSFET l VDSS 250V RDS(on) max 0.26Ω ID 14A Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS |
International Rectifier |
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Dallas |
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28B1225-100 | 2000 Series / Ferrites 2000 Series Ferrites for EMI Suppression w w at .D w h S a ee U 4 t m o .c Cylindrical Ferrites A 2.03 6.78 ± .15 9.53 ± .20 9.53 ± .20 9.53 ± .20 9.91 ± .20 12.70 ± .25 14.27 ± .25 14.27 ± .25 14.27 ± .25 14.27 ± .25 14.27 ± .25 14.48 ± .25 14.99 ± .25 14. |
ETC |
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2SA1225 | Silicon PNP Epitaxial Type Transistor TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1225 Power Amplifier Applications Driver Stage Amplifier Applications 2SA1225 Unit: mm • High transition frequency: fT = 100 MHz (typ.) • Complementary to 2SC2983 Absolute Maximum Ratings (Ta = 25°C) Characte |
Toshiba Semiconductor |
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2SA1225 | Silicon PNP Power Transistor isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SA1225 DESCRIPTION ·High transition frequency ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·Complementary to 2SC2983 APPLICATIONS ·Power amplifier applic |
Inchange Semiconductor |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |