Datasheet IRFR120A Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	IRFR120A	(IRFR120A / IRFU120A) Advanced Power MOSFET Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 100V Lower RDS(ON) : 0.155 Ω (Typ.) IRFR/U120A BVDSS = 100 V RDS(on) = 0.2 Ω ID = 8.4 A	Fairchild Semiconductor

IRFR1 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
IRFR120	(IRFR120 / IRFU120) HEXFET POWER MOSFET	International Rectifier
IRFR1205	(IRFR1205 / IRFU1205) Power MOSFET PD - 91318B IRFR/U1205 HEXFET® Power MOSFET l l l l l Ultra Low On-Resistance Surface Mount (IRFR1205) Straight Lead (IRFU1205) Fast Switching Fully Avalanche Rated D VDSS = 55V G S RDS(on) = 0.027Ω ID = 44A Description Fifth Generation HEXFETs from International Recti	International Rectifier
IRFR110	(IRFR110 / IRFU110) N-Channel Power MOSFETs IRFR110, IRFU110 Data Sheet July 1999 File Number 3275.3 4.7A, 100V, 0.540 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power ﬁeld effect transistors designed, tested, and guaranteed to withstand a speciﬁed level of energy in the breakdown a	Intersil Corporation

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nuevas actualizaciones

Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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