No | Part number | Description ( Function ) | Manufacturers | |
11 | IRFR120 | (IRFR120 / IRFU120) HEXFET POWER MOSFET |
International Rectifier |
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10 | IRFR120 | (IRFR120 / IRFU120) N-Channel Power MOSFETs IRFR120, IRFU120 Data Sheet July 1999 File Number 2414.2 8.4A, 100V, 0.270 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed |
Intersil Corporation |
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9 | IRFR120 | Power MOSFET ( Transistor ) www.vishay.com IRFR120, IRFU120, SiHFR120, SiHFU120 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () 100 VGS = 10 V Qg (Max.) (nC) 16 Qgs (nC) Qgd (nC) 4.4 7.7 Configuration Single 0.27 D DPAK (TO-252) D IPAK (TO-251) D G S G GD S S N-Channel MOSFET FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Surface Mount (IRFR120 |
Vishay Siliconix |
|
8 | IRFR1205 | (IRFR1205 / IRFU1205) Power MOSFET PD - 91318B IRFR/U1205 HEXFET® Power MOSFET l l l l l Ultra Low On-Resistance Surface Mount (IRFR1205) Straight Lead (IRFU1205) Fast Switching Fully Avalanche Rated D VDSS = 55V G S RDS(on) = 0.027Ω ID = 44A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon |
International Rectifier |
|
7 | IRFR1205PBF | Power MOSFET ( Transistor ) PD - 95600A IRFR/U1205PbF • Lead-Free www.irf.com 1 12/9/04 http:// IRFR/U1205PbF 2 www.irf.com http:// IRFR/U1205PbF www.irf.com 3 http:// IRFR/U1205PbF 4 www.irf.com http:// IRFR/U1205PbF www.irf.com 5 http:// IRFR/U1205PbF 6 www.irf.com http://www.Datash |
International Rectifier |
|
6 | IRFR120A | (IRFR120A / IRFU120A) Advanced Power MOSFET Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 100V Lower RDS(ON) : 0.155 Ω (Typ.) IRFR/U120A BVDSS = 100 V RDS(on) = 0.2 Ω ID = 8.4 A D-PAK 2 1 3 1 I-PAK 2 3 1. Gate 2. Drain 3. Source Absolute Maximum Rating |
Fairchild Semiconductor |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |