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IRFPS3810PBF PDF Datasheet

The IRFPS3810PBF is Hexfet Power MOSFET. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 IRFPS3810PBF
HEXFET Power MOSFET

l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free G Description The HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching sp

International Rectifier
International Rectifier
pdf

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Recommended search results related to IRFPS3810PBF

Part No Description ( Function) Manufacturers PDF
IRFPS3810   HEXFET Power MOSFET

PD - 93912A IRFPS3810 HEXFET® Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V G S RDS(on) = 0.009Ω ID = 170A† Description The HEXFET® Power

International Rectifier
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1N3810   Diode Forward Ref. Stabistor 1.75V 2-Pin DO-35

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1N3810A   Diode Forward Ref. Stabistor 1.75V 2-Pin DO-35

New Jersey Semiconductor
New Jersey Semiconductor
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1N3810B   Diode Forward Ref. Stabistor 1.75V 2-Pin DO-35

New Jersey Semiconductor
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2N3810   Type 2N3810 Geometry 0220 Polarity PNP

Data Sheet No. 2N3810 Type 2N3810 Geometry 0220 Polarity PNP Qual Level: JAN - JANS Features: • • • • Two electrically isolated, matched PNP transistors as one dual unit. Housed in TO-78 case. Also available in chip form using the 0220 chip geometry. The Min and Max limi

Semicoa Semiconductor
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