No | Part number | Description ( Function ) | Manufacturers | |
1 | IRFPS3810PBF | HEXFET Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free G Description The HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching sp |
International Rectifier |
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Recommended search results related to IRFPS3810PBF |
Part No | Description ( Function) | Manufacturers | |
IRFPS3810 | HEXFET Power MOSFET PD - 93912A IRFPS3810 HEXFET® Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V G S RDS(on) = 0.009Ω ID = 170A Description The HEXFET® Power |
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1N3810A | Diode Forward Ref. Stabistor 1.75V 2-Pin DO-35 |
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1N3810B | Diode Forward Ref. Stabistor 1.75V 2-Pin DO-35 |
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2N3810 | Type 2N3810 Geometry 0220 Polarity PNP Data Sheet No. 2N3810 Type 2N3810 Geometry 0220 Polarity PNP Qual Level: JAN - JANS Features: • • • • Two electrically isolated, matched PNP transistors as one dual unit. Housed in TO-78 case. Also available in chip form using the 0220 chip geometry. The Min and Max limi |
Semicoa Semiconductor |
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