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IRFPS29N60LPBF PDF Datasheet

The IRFPS29N60LPBF is Power MOSFET ( Transistor ). It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 IRFPS29N60LPBF
Power MOSFET ( Transistor )

SMPS MOSFET PD - 95907 IRFPS29N60LPbF Applications • Zero Voltage Switching SMPS • Telecom and Server Power Supplies • Uninterruptible Power Supplies • Motor Control applications • Lead-Free HEXFET® Power MOSFET VDSS RDS(on) typ. Trr typ. ID 600V 175mΩ 130ns 29A Features and Benefits • SuperFast body diode eliminates the need for external diodes in ZVS appli

International Rectifier
International Rectifier
pdf

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Recommended search results related to IRFPS29N60LPBF

Part No Description ( Function) Manufacturers PDF
IRFPS29N60L   SMPS MOSFET

PD - 94622 SMPS MOSFET IRFPS29N60L HEXFET® Power MOSFET Applications • Zero Voltage Switching SMPS VDSS RDS(on) typ. Trr typ. ID • Telecom and Server Power Supplies • Uninterruptible Power Supplies 175mΩ 600V 130ns 29A • Motor Control applications Features and Benef

International Rectifier
International Rectifier
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IRFPS29N60L   Power MOSFET ( Transistor )

IRFPS29N60L, SiHFPS29N60L Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 600 VGS = 10 V 220 67 96 Single D 0.175 SUPER-247TM G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb S D G FEA

Vishay
Vishay
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2N2960   Bipolar NPN Device

2N2960 Dimensions in mm (inches). 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. Bipolar NPN Device. 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.0

Seme LAB
Seme LAB
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2N2960   Small Signal Transistors

Small Signal Transistors TO-39 Case (Continued) TYPE NO. DESCRIPTION VCBO (V) VCEO (V) *VCER VEBO (V) ICBO @ VCB (µA) (V) *ICEO **ICES ***ICEV ****ICER MIN 5.0 5.0 5.0 5.0 5.0 5.0 4.0 5.0 5.0 5.0 5.0 5.0 5.0 7.0 7.0 5.0 4.0 7.0 7.0 7.0 7.0 5.0 4.0 4.0 5.0 4.0 4.0 4.0 5.0 5.0 5.0

Central
Central
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2SC2960   High-Speed Switching Applications

Ordering number:EN829H PNP/NPN Epitaxial Planar Silicon Transistors 2SA1481/2SC2960 High-Speed Switching Applications Features · Fast switching speed. · High breakdown voltage. Package Dimensions unit:mm 2033 [2SA1481/2SC2960] ( ) : 2SA1481 B : Base C : Collector E : Emitt

Sanyo Semicon Device
Sanyo Semicon Device
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[1]    

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Part Number Function Manufacturers PDF
1N4007

The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V.

Vishay Semiconductor
Vishay
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LM317

This is a popular adjustable voltage regulator.
( 1.2V to 37V)

On Semiconductor
ON Semiconductor
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 6N137  |   LM393   |   2N3906    |   2N2222   |   TIP120   |

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