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Datasheet IRFP460LC Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | IRFP460LC | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRFP460LC
FEATURES ·Drain Current –ID= 20A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 500V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.27Ω(Max) ·Fast Switching
DESCRIPTION ·Designed for use in switch |
 Inchange Semiconductor |
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| 3 | IRFP460LC | Power MOSFET ( Transistor ) Previous Datasheet
Index
Next Data Sheet
PD - 9.1232
IRFP460LC
HEXFET ® Power MOSFET
Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V V gs Rating Reduced C iss, Coss, Crss Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive Avalanche Rated Description
This new series |
 International Rectifier |
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| 2 | IRFP460LC | Power MOSFET ( Transistor ) IRFP460LC, SiHFP460LC
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
500 VGS = 10 V 120 32 49 Single
D
FEATURES
0.27
VDS (V)
RDS(on) (Ω)
Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
• • • • • • • •
Ultra Low Gate Charge Reduced Gate Drive Requirement Enhan |
 Vishay Siliconix |
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| 1 | IRFP460LCPBF | HEXFET Power MOSFET PD - 94902
IRFP460LCPbF
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Lead-Free
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IRFP460LCPbF
TO-247AC Package Outline
Dimensions are |
International Rectifier |
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