No | Part number | Description ( Function ) | Manufacturers | |
2 | IRFP450LC | Power MOSFET ( Transistor ) Previous Datasheet Index Next Data Sheet PD - 9.1231 IRFP450LC HEXFET ® Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V V gs Rating Reduced C iss, Coss, Crss Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive Avalanche Rated Description This new series of Low Charge HEXFET Power MOSFETs achieve significantly lower gate charge over |
International Rectifier |
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1 | IRFP450LC | Power MOSFET ( Transistor ) IRFP450LC, SiHFP450LC Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 74 19 35 Single D FEATURES 500 0.40 • • • • • • • • Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30 V VGS Rating Reduced Ciss, Coss, Crss Isolated Central Mounting Hole Dynamic dV/dt Rated Repetit |
Vishay Siliconix |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |