Datasheet IRFP450FI Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	IRFP450FI	N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS IRFP450/FI IRFW450 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS PRELIMINARY DATA TYPE IRFP450 IRFP450FI IRFW450 s s s s V DSS 500 V 500 V 500 V R DS( on) < 0.4 Ω < 0.4 Ω < 0.4 Ω ID 14 A 9A 14 A TO-247 TYPICAL RDS(on) = 0.33 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPET	STMicroelectronics

IRFP45 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
IRFP450	Power MOSFET ( Transistor )	International Rectifier
IRFP450	N-Channel MOSFET Transistor INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRFP450 FEATURES ·Drain Current –ID= 14A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.4Ω(Max) ·Fast Switching DESCRIPTION ·Designed f	Inchange Semiconductor
IRFP450B	500V N-Channel MOSFET IRFP450B November 2001 IRFP450B 500V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-	Fairchild Semiconductor

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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