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Datasheet IRFP3710 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
2 | IRFP3710 | Power MOSFET ( Transistor )
PD-91490C
IRFP3710
HEXFET® Power MOSFET
l l l l l
Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated
D
VDSS = 100V RDS(on) = 0.025W
G S
Description
Fifth Generation HEXFETs from International Rectifier utiliz |
International Rectifier |
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1 | IRFP3710PBF | Power MOSFET ( Transistor ) l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated
l Lead-Free
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. T |
International Rectifier |
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Número de pieza | Descripción | Fabricantes | |
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Sanken |
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