No | Part number | Description ( Function ) | Manufacturers | |
11 | IRFP350 | N-Channel MOSFET Transistor INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRFP350 FEATURES ·Drain Current –ID= 16A@ TC=25℃ ·Drain Source Voltage- : VDSS= 400V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.3Ω(Max) ·Fast Switching DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta= |
Inchange Semiconductor |
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10 | IRFP350 | Power MOSFET ( Transistor ) $GYDQFHG 3RZHU 026)(7 IRFP350 FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 400V ♦ Low RDS(ON): 0.254Ω (Typ.) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic D |
Fairchild Semiconductor |
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9 | IRFP350 | (IRFP350 - IRFP353) N-CHANNEL POWER MOSFETS |
Samsung semiconductor |
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8 | IRFP350 | Power MOSFET ( Transistor ) DataSheet 4 U .com www.DataSheet4U DataSheet 4 U .com www.DataSheet4U DataSheet 4 U .com www.DataSheet4U DataSheet 4 U .com |
International Rectifier |
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7 | IRFP350 | N-Channel Power MOSFET / Transistor IRFP350 Data Sheet July 1999 File Number 2319.4 16A, 400V, 0.300 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed |
Intersil Corporation |
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6 | IRFP350 | Power MOSFET ( Transistor ) Power MOSFET IRFP350, SiHFP350 Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) 400 VGS = 10 V 150 Qgs (nC) 23 Qgd (nC) 80 Configuration Single 0.30 TO-247AC D S D G G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Isolated Central Mounting Hole • Fas |
Vishay |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |