No | Part number | Description ( Function ) | Manufacturers | |
5 | IRFP264 | Power MOSFET ( Transistor ) ww w.D ata Sh ee t4U .co m ww w.D ata Sh ee t4U .co m ww w.D ata Sh ee t4U .co m ww w.D ata Sh ee t4U .co m ww w.D ata Sh ee t4U .co m ww w.D ata Sh ee t4U .co m |
International Rectifier |
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4 | IRFP264 | Standard Power MOSFET - N-Channel Enhancement Mode Standard Power MOSFET IRFP 264 VDSS = 250 V ID (cont) = 38 A RDS(on) = 0.075 Ω N-Channel Enhancement Mode Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PD TJ TJM T stg Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C IS ≤ IDM, di/dt |
IXYS Corporation |
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3 | IRFP264 | Power MOSFET ( Transistor ) IRFP264, SiHFP264 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 210 35 98 Single D FEATURES 250 0.075 • • • • • • • Dynamic dV/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements Compliant to RoHS Directive |
Vishay |
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2 | IRFP264N | Power MOSFET ( Transistor ) PD - 94214 IRFP264N HEXFET® Power MOSFET l l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Ease of Paralleling Simple Drive Requirements D VDSS = 250V RDS(on) = 60mΩ G S ID = 44A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processi |
International Rectifier |
|
1 | IRFP264NPBF | HEXFET Power MOSFET PD - 94811 IRFP264NPbF HEXFET® Power MOSFET Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Ease of Paralleling Simple Drive Requirements Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. T |
International Rectifier |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |