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Datasheet IRFP260 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 6 | IRFP260 | Standard Power MOSFET - N-Channel Enhancement Mode
Standard Power MOSFET
N-Channel Enhancement Mode
IRFP 260 VDSS
ID (cont) RDS(on)
= 200 V = 46 A = 55 mΩ
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PD TJ TJM Tstg Md Weight
Test Conditions TJ TJ = 25°C to 150°C = 25°C to 150°C; RGS = 1 MΩ
Maximum Ratings 200 20 |
 IXYS Corporation |
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| 5 | IRFP260 | Power MOSFET ( Transistor ) Power MOSFET
IRFP260, SiHFP260
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
200 VGS = 10 V
230 42 110 Single
0.055
TO-247AC
D
S
D G
G
S N-Channel MOSFET
FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Isolated Cen |
 Vishay Siliconix |
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| 4 | IRFP260MPBF | Power MOSFET ( Transistor ) PD - 96293
IRFP260MPbF
HEXFET® Power MOSFET
l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements l Lead-Free
D VDSS = 200V
RDS(on) = 0.04Ω
G
ID = 50A
S
Description
Fifth |
 International Rectifier |
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| 3 | IRFP260N | Power MOSFET ( Transistor ) PD - 94004B
IRFP260N
l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements
HEXFET® Power MOSFET
D
VDSS = 200V
RDS(on) = 0.04Ω
G
ID = 50A
S
Description
Fifth Generation HEXF |
International Rectifier |
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