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Datasheet IRFP254 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
11 | IRFP254 | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRFP254
FEATURES ·Drain Current –ID= 23A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 250V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.14Ω(Max) ·Fast Switching
DESCRIPTION ·Designed for use in switch mo |
Inchange Semiconductor |
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10 | IRFP254 | Power MOSFET ( Transistor ) $GYDQFHG 3RZHU 026)(7
IRFP254
FEATURES
♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 250V ♦ Low RDS(ON): 0.108Ω (Typ.)
Absolute Maximum Rati |
Fairchild Semiconductor |
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9 | IRFP254 | Power MOSFET ( Transistor ) IRFP254, SiHFP254
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 140 24 71 Single
D
FEATURES
250 0.14
• • • • • • •
Dynamic dV/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Swit |
Vishay |
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8 | IRFP254 | Power MOSFET ( Transistor ) Free Datasheet http://
Free Datasheet http://
Free Datasheet http://
Free Datasheet http://
Free Datasheet http://
Free Datasheet http://
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IRF |
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Número de pieza | Descripción | Fabricantes | |
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