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Datasheet IRFP250 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
15 | IRFP250 | N-Channel Power Mosfets |
Samsung semiconductor |
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14 | IRFP250 | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRFP250
FEATURES ·Drain Current –ID= 33A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 200V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.085Ω(Max) ·Fast Switching
DESCRIPTION ·Designed for use in switch m |
Inchange Semiconductor |
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13 | IRFP250 | N-Channel Power MOSFET / Transistor Data Sheet
January 2002
IRFP250
33A, 200V, 0.085 Ohm, N-Channel Power MOSFET
This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operat |
Fairchild |
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12 | IRFP250 | N-Channel Power Mosfets |
Samsung |
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Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
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