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Datasheet IRFP250 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 15 | IRFP250 | N-Channel Power Mosfets |
 Samsung semiconductor |
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| 14 | IRFP250 | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRFP250
FEATURES ·Drain Current –ID= 33A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 200V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.085Ω(Max) ·Fast Switching
DESCRIPTION ·Designed for use in switch m |
 Inchange Semiconductor |
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| 13 | IRFP250 | N-Channel Power MOSFET / Transistor Data Sheet
January 2002
IRFP250
33A, 200V, 0.085 Ohm, N-Channel Power MOSFET
This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operat |
 Fairchild |
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| 12 | IRFP250 | N-Channel Power Mosfets |
 Samsung |
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