Datasheet IRFP143R Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	IRFP143R	N-Channel MOSFET Transistor INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRFP143R FEATURES ·Drain Current –ID= 27A@ TC=25℃ ·Drain Source Voltage- : VDSS= 80V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.099Ω(Max) ·Fast Switching DESCRIPTION ·Designed for use in switch m	Inchange Semiconductor

IRFP1 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
IRFP150N	Power MOSFET ( Transistor ) l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silico	International Rectifier
IRFP150	Power MOSFET ( Transistor ) Power MOSFET IRFP150, SiHFP150 Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 100 VGS = 10 V 140 29 68 Single 0.055 TO-247AC D S D G G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb FEATURES �	Vishay
IRFP140N	Power MOSFET ( Transistor ) PD - 91343B IRFP140N HEXFET® Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V G S RDS(on) = 0.052Ω ID = 33A Description Fifth Generation HEXFETs from International Rect	International Rectifier

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Número de pieza	Descripción	Fabricantes	PDF
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