No | Part number | Description ( Function ) | Manufacturers | |
1 | IRFP140NPBF | HEXFET Power MOSFET PD- 95711 IRFP140NPbF Lead-Free www.irf.com 1 8/2/04 IRFP140NPbF 2 www.irf.com IRFP140NPbF www.irf.com 3 IRFP140NPbF 4 www.irf.com IRFP140NPbF www.irf.com 5 IRFP140NPbF 6 www.irf.com IRFP140NPbF www.irf.com 7 IRFP140NPbF TO-247AC Package Outline Dimensions are shown in millimeters (inches) TO-247AC Part Marking Information EXAMPLE: T HIS IS AN IRF PE3 |
International Rectifier |
0  1  2  3  4  5  6  7  8 9 |
Recommended search results related to IRFP140NPBF |
Part No | Description ( Function) | Manufacturers | |
IRFP140 | N-channel Power MOSFET |
Fairchild Semiconductor |
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IRFP140 | Power MOSFET ( Transistor ) |
International Rectifier |
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IRFP1405 | AUTOMOTIVE MOSFET PD - 95810 AUTOMOTIVE MOSFET IRFP1405 HEXFET® Power MOSFET D Features ● ● ● ● ● Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax VDSS = 55V G S RDS(on) = 5.3mΩ ID = 95A Des |
International Rectifier |
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IRFP1405PBF | Power MOSFET ( Transistor ) PD - 95509A IRFP1405PbF Features l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET® Power MOSFET utilizes the latest processing techniques to ac |
International Rectifier |
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IRFP140A | Advanced Power MOSFET Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175 C Operating Temperature Lower Leakage Current : 10 µA (Max.) @ VDS = 100V Lower RDS(ON) : 0.041 Ω (Typ.) Ο IR |
Fairchild Semiconductor |
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ON Semiconductor |
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