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Datasheet IRFM260 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 IRFM260   TRANSISTOR N-CHANNEL

Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD-9.1388A REPETITIVE AVALANCHE AND dv/dt RATED IRFM260 N-CHANNEL HEXFET ® TRANSISTOR 200Volt, 0.060Ω , HEXFET HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The eff
 International Rectifier
International Rectifier		 datasheet IRFM260 pdf

IRFM Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
IRFML8244TRPBF

HEXFET Power MOSFET

PD - 97587A IRFML8244TRPbF VDS VGS Max RDS(on) max (@VGS = 10V) 25 ± 20 24 41 V V m m 6  *  HEXFET® Power MOSFET  ' Micro3TM (SOT-23) IRFML8244TRPbF RDS(on) max (@VGS = 4.5V) Application(s) Load/ System Switch Features and Benefits Features Low RDS(on) (
International Rectifier
International Rectifier		 datasheet pdf - International Rectifier
IRFM450

Power MOSFET ( Transistor )

PD - 90493F POWER MOSFET THRU-HOLE (TO-254AA) Product Summary Part Number IRFM450 IRFM450 JANTX2N7228 JANTXV2N7228 REF: MIL-PRF-19500/592 500V, N-CHANNEL HEXFET MOSFET TECHNOLOGY ® RDS(on) 0.415 Ω ID 12A HEXFET® MOSFET technology is the key to International Rectifier’s
 IRF
IRF		 datasheet pdf - IRF
IRFML8244TRPBF

HEXFET Power MOSFET

Product specification IRFML8244TRPbF VDS VGS Max RDS(on) max (@VGS = 10V) 25 ± 20 24 41 V V m m 6  *  HEXFET® Power MOSFET  ' Micro3TM (SOT-23) IRFML8244TRPbF RDS(on) max (@VGS = 4.5V) Application(s) Load/ System Switch Features and Benefits Features Low
TY Semiconductor
TY Semiconductor		 datasheet pdf - TY Semiconductor


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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

 Sanken
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