| No | Part number | Description ( Function ) | Manufacturers | |
| 3 | IRFL1006 | Power MOSFET ( Transistor ) PD - 91876 IRFL1006 HEXFET® Power MOSFET l l l l l Surface Mount Advanced Process Technology Dynamic dv/dt Rating Fast Switching Fully Avalanche Rated D VDSS = 60V RDS(on) = 0.22Ω G S ID = 1.6A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, |
 International Rectifier |
|
| 2 | IRFL1006 | Power MOSFET ( Transistor ) PD - 91876 IRFL1006 HEXFET® Power MOSFET l l l l l Surface Mount Advanced Process Technology Dynamic dv/dt Rating Fast Switching Fully Avalanche Rated D VDSS = 60V RDS(on) = 0.22Ω G S ID = 1.6A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, |
International Rectifier |
|
| 1 | IRFL1006PBF | HEXFET Power MOSFET PD - 95316 IRFL1006PbF HEXFET® Power MOSFET Surface Mount Advanced Process Technology Dynamic dv/dt Rating Fast Switching Fully Avalanche Rated Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and rugge |
International Rectifier |
|
List of most widely used semiconductors
| Part Number | Function | Manufacturers | |
| 1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
 Vishay |
|
| LM317 | This is a popular adjustable voltage regulator. |
 ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |
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