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Datasheet IRFIZ48N Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | IRFIZ48N | Power MOSFET(Vdss=55V/ Rds(on)=0.016ohm/ Id=36A) PD 9.1407
PRELIMINARY
IRFIZ48N
HEXFET® Power MOSFET
D
l l l l l
Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated
U
G
VDSS = 55V RDS(on) = 0.016Ω ID = 36A
S
Description
Fifth Generation HEXFETs from Int |
 International Rectifier |
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| 1 | IRFIZ48NPBF | Power MOSFET ( Transistor ) l Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS
l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated l Lead-Free
G
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-r |
International Rectifier |
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