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Datasheet IRFIZ46N Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | IRFIZ46N | Power MOSFET(Vdss=55V/ Rds(on)=0.020ohm/ Id=33A) PD - 9.1306A
IRFIZ46N
HEXFET® Power MOSFET
l l l l l
Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated
D
VDSS = 55V
G S
RDS(on) = 0.020Ω ID = 33A
Description
Fifth Generation HEXFETs from International |
 International Rectifier |
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| 1 | IRFIZ46NPBF | Power MOSFET ( Transistor ) l Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS
l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated l Lead-Free
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible o |
International Rectifier |
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