Datasheet IRFIZ44NPBF Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	IRFIZ44NPBF	HEXFET Power MOSFET PD - 94836 IRFIZ44NPbF l l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated Lead-Free HEXFET® Power MOSFET VDSS = 55V RDS(on) = 0.024Ω D G S ID = 31A Description Fifth Generation HEXFETs from	International Rectifier

IRFIZ44N Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
IRFIZ44N	Power MOSFET(Vdss=55V/ Rds(on)=0.024ohm/ Id=31A) PD - 9.1403A IRFIZ44N HEXFET® Power MOSFET l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D VDSS = 55V RDS(on) = 0.024Ω G ID = 31A S Description Fifth Generation HEXFE	International Rectifier
IRFIZ44NPBF	HEXFET Power MOSFET PD - 94836 IRFIZ44NPbF l l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated Lead-Free HEXFET® Power MOSFET VDSS = 55V RDS(on) = 0.024Ω D G S ID = 31A Description Fifth Gen	International Rectifier

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Número de pieza	Descripción	Fabricantes	PDF
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