No | Part number | Description ( Function ) | Manufacturers | |
2 | IRFIZ34E | Power MOSFET(Vdss=60V/ Rds(on)=0.042ohm/ Id=21A) PD - 9.1674A IRFIZ34E HEXFET® Power MOSFET l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D VDSS = 60V RDS(on) = 0.042Ω G S ID = 21A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-r |
International Rectifier |
|
1 | IRFIZ34EPBF | HEXFET Power MOSFET PD - 94839 IRFIZ34EPbF l l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated Lead-Free HEXFET® Power MOSFET D VDSS = 60V RDS(on) = 0.042Ω G S ID = 21A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extre |
International Rectifier |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |