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IRFIZ24G PDF Datasheet

The IRFIZ24G is Hexfet Power MOSFET. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 IRFIZ24G
HEXFET POWER MOSFET

International Rectifier
International Rectifier
pdf

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Recommended search results related to IRFIZ24G

Part No Description ( Function) Manufacturers PDF
IRFIZ24A   Power MOSFET ( Transistor )

Advanced Power MOSFET IRFW/IZ24A FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175¡ ÉOperating Temperature Lower Leakage Current : 10 µA (Max.) @ VDS = 60V Lower RDS(ON) : 0.050 �

Samsung
Samsung
datasheet pdf
IRFIZ24E   Power MOSFET(Vdss=60V/ Rds(on)=0.071ohm/ Id=14A)

PD - 9.1673A IRFIZ24E HEXFET® Power MOSFET Advanced Process Technology Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description l l D VDSS = 60V G S RDS(on) = 0.071Ω ID = 14A Fifth Generation HEXFETs

International Rectifier
International Rectifier
datasheet pdf
IRFIZ24EPBF   HEXFET Power MOSFET

PD - 95594 IRFIZ24EPbF Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated l Lead-Free Description l HEXFET® Power MOSFET D VDSS = 60V RDS(on) = 0.071Ω G S Fifth Generation HEX

International Rectifier
International Rectifier
datasheet pdf
IRFIZ24N   Power MOSFET(Vdss=55V/ Rds(on)=0.07ohm/ Id=14A)

PD - 9.1501A IRFIZ24N HEXFET® Power MOSFET Advanced Process Technology Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description l l D VDSS = 55V G S RDS(on) = 0.07Ω ID = 14A Fifth Generation HEXFETs

International Rectifier
International Rectifier
datasheet pdf
IRFIZ24NPBF   Power MOSFET ( Transistor )

Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-

International Rectifier
International Rectifier
datasheet pdf

[1]    

List of most widely used semiconductors

Part Number Function Manufacturers PDF
1N4007

The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V.

Vishay Semiconductor
Vishay
pdf
LM317

This is a popular adjustable voltage regulator.
( 1.2V to 37V)

On Semiconductor
ON Semiconductor
pdf

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