No | Part number | Description ( Function ) | Manufacturers | |
1 | IRFIZ24G | HEXFET POWER MOSFET |
International Rectifier |
0  1  2  3  4  5  6  7  8 9 |
Recommended search results related to IRFIZ24G |
Part No | Description ( Function) | Manufacturers | |
IRFIZ24A | Power MOSFET ( Transistor ) Advanced Power MOSFET IRFW/IZ24A FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175¡ ÉOperating Temperature Lower Leakage Current : 10 µA (Max.) @ VDS = 60V Lower RDS(ON) : 0.050 � |
Samsung |
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IRFIZ24E | Power MOSFET(Vdss=60V/ Rds(on)=0.071ohm/ Id=14A) PD - 9.1673A IRFIZ24E HEXFET® Power MOSFET Advanced Process Technology Isolated Package l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description l l D VDSS = 60V G S RDS(on) = 0.071Ω ID = 14A Fifth Generation HEXFETs |
International Rectifier |
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IRFIZ24EPBF | HEXFET Power MOSFET PD - 95594 IRFIZ24EPbF Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated l Lead-Free Description l HEXFET® Power MOSFET D VDSS = 60V RDS(on) = 0.071Ω G S Fifth Generation HEX |
International Rectifier |
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IRFIZ24N | Power MOSFET(Vdss=55V/ Rds(on)=0.07ohm/ Id=14A) PD - 9.1501A IRFIZ24N HEXFET® Power MOSFET Advanced Process Technology Isolated Package l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description l l D VDSS = 55V G S RDS(on) = 0.07Ω ID = 14A Fifth Generation HEXFETs |
International Rectifier |
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IRFIZ24NPBF | Power MOSFET ( Transistor ) Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on- |
International Rectifier |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |