No | Part number | Description ( Function ) | Manufacturers | |
1 | IRFIBF30G | Power MOSFET ( Transistor ) IRFIBF30G, SiHFIBF30G Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 900 VGS = 10 V 78 10 42 Single TO-220 FULLPAK D 3.7 G GDS S N-Channel MOSFET FEATURES • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Dynamic dV/dt Rati |
International Rectifier |
0  1  2  3  4  5  6  7  8 9 |
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