Datasheet IRFI9520N Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	IRFI9520N	Power MOSFET ( Transistor ) PRELIMINARY l Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4.8mm l P-Channel l Fully Avalanche Rated Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely	International Rectifier

IRFI95 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
IRFI9530G	Power MOSFET(Vdss=-100V/ Rds(on)=0.30ohm/ Id=-7.7A)	International Rectifier
IRFI9520G	HEXFET Power MOSFET	International Rectifier
IRFI9530GPBF	HEXFET Power MOSFET PD - 94932 IRFI9530GPbF • Lead-Free www.irf.com 1 1/8/04 IRFI9530GPbF 2 www.irf.com IRFI9530GPbF www.irf.com 3 IRFI9530GPbF 4 www.irf.com IRFI9530GPbF www.irf.com 5 IRFI9530GPbF 6 www.irf.com IRFI9530GPbF TO-220 Full-Pak Package Outline Dimensions are shown	International Rectifier

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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