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Datasheet IRFI820 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | IRFI820 | HEXFET POWER MOSFET This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components.
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 International Rectifier |
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| 3 | IRFI820A | Advanced Power MOSFET
$GYDQFHG 3RZHU 026)(7
FEATURES
♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 500V ♦ Lower RDS(ON): 2.000Ω (Typ.)
IRFW/I82 |
 Fairchild Semiconductor |
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| 2 | IRFI820B | 500V N-Channel MOSFET IRFW820B / IRFI820B
November 2001
IRFW820B / IRFI820B
500V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize o |
Fairchild Semiconductor |
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| 1 | IRFI820G | HEXFET POWER MOSFET This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components.
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International Rectifier |
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