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Datasheet IRFI644 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 7 | IRFI644 | 250V N-Channel MOSFET IRFW644B / IRFI644B
November 2001
IRFW644B / IRFI644B
250V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize o |
 Fairchild Semiconductor |
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| 6 | IRFI644 | Power MOSFET(Vdss=250V/ Rds(on)=0.28ohm/ Id=7.9A) |
 International Rectifier |
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| 5 | IRFI644A | (IRFI644A / IRFW644A) Advanced Power MOSFET
$GYDQFHG 3RZHU 026)(7
FEATURES
♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 250V ♦ Lower RDS(ON): 0.214Ω (Typ.)
IRFW/I64 |
Fairchild Semiconductor |
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| 4 | IRFI644B | 250V N-Channel MOSFET IRFW644B / IRFI644B
November 2001
IRFW644B / IRFI644B
250V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize o |
Fairchild Semiconductor |
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